Lateral Scaling in Carbon-Nanotube Field-Effect Transistors

Carbon Nanotube Field Effect Transistors

The present paper treats the Carbon Nanotube Field Effect Transistors (CNFETs) in terms of new development as a possible future basic element for beyond CMOS technology used in ultra high scale integration ULSI. The CNFET is studied both in physical as well as technological point of views aiming a further understanding of the limitations to high integration density. The different types of carbo...

Carbon Nanotube Field-effect Transistors

This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After reviewing the status of device technology, we use results of our numerical simulations to discuss the physics of CNTFETs emphasizing the similarities and differences with traditional FETs. The discussion shows that our understanding of CNTFET device physics has matured to the point where experim...

Simulations of Carbon Nanotube Field Effect Transistors

As the scaling of Si MOSFET approaches towards its limiting value, new alternatives are coming up to overcome these limitations. In this paper first we have reviewed carbon nanotube field effect transistor (CNTFET) and types of CNTFET. We have then studied the effect of channel length and chirality on the drain current for planer CNTFET. The Id~Vd curves for planer CNTFETs having different chan...

Modeling of Carbon Nanotube Field Effect Transistors

Modeling of Carbon Nanotube Field-Effect Transistors

In this thesis, models are presented for the design and analysis of carbon nanotube field-effect transistors (CNFETs). Such transistors are being seriously considered for applications in the emerging field of nanotechnology. Because of the small size of these devices, and the nearone-dimensional nature of charge transport within them, CNFET modeling demands a rigorous quantum-mechanical basis. ...